![Subthreshold swing, Additional concepts video lecture by Prof Prof. Sanjiv Sambandan of IISc Bangalore Subthreshold swing, Additional concepts video lecture by Prof Prof. Sanjiv Sambandan of IISc Bangalore](https://i.ytimg.com/vi/FuA54en1SOw/hqdefault.jpg)
Subthreshold swing, Additional concepts video lecture by Prof Prof. Sanjiv Sambandan of IISc Bangalore
![illustrates the subthreshold swing versus gate length for different... | Download Scientific Diagram illustrates the subthreshold swing versus gate length for different... | Download Scientific Diagram](https://www.researchgate.net/profile/Chunsheng-Jiang-2/publication/275972943/figure/fig2/AS:391782203445251@1470419564644/llustrates-the-subthreshold-swing-versus-gate-length-for-different-channel-thicknesses-A.png)
illustrates the subthreshold swing versus gate length for different... | Download Scientific Diagram
![Figure 12 | A center-potential-based threshold voltage model for a graded-channel dual-material double-gate strained-Si MOSFET with interface charges | SpringerLink Figure 12 | A center-potential-based threshold voltage model for a graded-channel dual-material double-gate strained-Si MOSFET with interface charges | SpringerLink](https://media.springernature.com/full/springer-static/image/art%3A10.1007%2Fs10825-019-01377-5/MediaObjects/10825_2019_1377_Fig12_HTML.png)
Figure 12 | A center-potential-based threshold voltage model for a graded-channel dual-material double-gate strained-Si MOSFET with interface charges | SpringerLink
![Energy-efficient transistors: suppressing the subthreshold swing below the physical limit - Materials Horizons (RSC Publishing) DOI:10.1039/D0MH02029J Energy-efficient transistors: suppressing the subthreshold swing below the physical limit - Materials Horizons (RSC Publishing) DOI:10.1039/D0MH02029J](https://pubs.rsc.org/image/article/2021/MH/d0mh02029j/d0mh02029j-f1_hi-res.gif)
Energy-efficient transistors: suppressing the subthreshold swing below the physical limit - Materials Horizons (RSC Publishing) DOI:10.1039/D0MH02029J
![MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit - Liu - 2018 - Advanced Materials - Wiley Online Library MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit - Liu - 2018 - Advanced Materials - Wiley Online Library](https://onlinelibrary.wiley.com/cms/asset/caf8d1c3-194c-48f1-90dd-e9bd77149687/adma201800932-fig-0004-m.jpg)
MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit - Liu - 2018 - Advanced Materials - Wiley Online Library
![Partially Depleted Silicon-on-Ferroelectric Insulator Field Effect Transistor- Parametrization & Design Optimization for Minimum Subthreshold Swing - ScienceDirect Partially Depleted Silicon-on-Ferroelectric Insulator Field Effect Transistor- Parametrization & Design Optimization for Minimum Subthreshold Swing - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S0026269215001950-gr1.jpg)
Partially Depleted Silicon-on-Ferroelectric Insulator Field Effect Transistor- Parametrization & Design Optimization for Minimum Subthreshold Swing - ScienceDirect
![Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor | Scientific Reports Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor | Scientific Reports](https://media.springernature.com/lw685/springer-static/image/art%3A10.1038%2Fsrep24734/MediaObjects/41598_2016_Article_BFsrep24734_Fig6_HTML.jpg)
Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor | Scientific Reports
![A two-dimensional model for the subthreshold swing of short-channel double-gate metal–oxide–semiconductor field effect transistors with a vertical Gaussian-like doping profile: Journal of Applied Physics: Vol 109, No 5 A two-dimensional model for the subthreshold swing of short-channel double-gate metal–oxide–semiconductor field effect transistors with a vertical Gaussian-like doping profile: Journal of Applied Physics: Vol 109, No 5](https://aip.scitation.org/action/showOpenGraphArticleImage?doi=10.1063/1.3552309&id=images/medium/1.3552309.figures.f6.gif)
A two-dimensional model for the subthreshold swing of short-channel double-gate metal–oxide–semiconductor field effect transistors with a vertical Gaussian-like doping profile: Journal of Applied Physics: Vol 109, No 5
![Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs](https://www.degruyter.com/document/doi/10.1515/psr-2016-0008/asset/graphic/j_psr-2016-0008_fig_016.jpg)
Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs
![Energy-efficient transistors: suppressing the subthreshold swing below the physical limit - Materials Horizons (RSC Publishing) DOI:10.1039/D0MH02029J Energy-efficient transistors: suppressing the subthreshold swing below the physical limit - Materials Horizons (RSC Publishing) DOI:10.1039/D0MH02029J](https://pubs.rsc.org/image/article/2021/MH/d0mh02029j/d0mh02029j-f2_hi-res.gif)
Energy-efficient transistors: suppressing the subthreshold swing below the physical limit - Materials Horizons (RSC Publishing) DOI:10.1039/D0MH02029J
![Semiconductor Devices and Circuits (Prof. Sanjiv Sambandan, IISc Bangalore): Lecture 40 - Subthreshold Swing, Additional Concepts Semiconductor Devices and Circuits (Prof. Sanjiv Sambandan, IISc Bangalore): Lecture 40 - Subthreshold Swing, Additional Concepts](https://i.ytimg.com/vi/FuA54en1SOw/maxresdefault.jpg)
Semiconductor Devices and Circuits (Prof. Sanjiv Sambandan, IISc Bangalore): Lecture 40 - Subthreshold Swing, Additional Concepts
![Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor | Scientific Reports Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor | Scientific Reports](https://media.springernature.com/lw685/springer-static/image/art%3A10.1038%2Fsrep24734/MediaObjects/41598_2016_Article_BFsrep24734_Fig3_HTML.jpg)
Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor | Scientific Reports
![Figure 7 | An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers | SpringerLink Figure 7 | An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers | SpringerLink](https://media.springernature.com/full/springer-static/image/art%3A10.1007%2Fs00542-018-4227-1/MediaObjects/542_2018_4227_Fig7_HTML.png)
Figure 7 | An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers | SpringerLink
![Threshold gate voltage and subthreshold swing of the ultrathin silicon-on-insulator field effect transistor: Analytical model: Journal of Applied Physics: Vol 112, No 12 Threshold gate voltage and subthreshold swing of the ultrathin silicon-on-insulator field effect transistor: Analytical model: Journal of Applied Physics: Vol 112, No 12](https://aip.scitation.org/action/showOpenGraphArticleImage?doi=10.1063/1.4770475&id=images/medium/1.4770475.figures.f2.gif)
Threshold gate voltage and subthreshold swing of the ultrathin silicon-on-insulator field effect transistor: Analytical model: Journal of Applied Physics: Vol 112, No 12
![Electronics | Free Full-Text | Effects of Back-Gate Bias on Subthreshold Swing of Tunnel Field-Effect Transistor Electronics | Free Full-Text | Effects of Back-Gate Bias on Subthreshold Swing of Tunnel Field-Effect Transistor](https://www.mdpi.com/electronics/electronics-08-01415/article_deploy/html/images/electronics-08-01415-g002.png)
Electronics | Free Full-Text | Effects of Back-Gate Bias on Subthreshold Swing of Tunnel Field-Effect Transistor
![An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers | SpringerLink An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers | SpringerLink](https://media.springernature.com/lw685/springer-static/image/art%3A10.1007%2Fs00542-018-4227-1/MediaObjects/542_2018_4227_Fig3_HTML.png)
An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers | SpringerLink
![Steep Subthreshold Swing n- and p-Channel Operation of Bendable Feedback Field-Effect Transistors with p+–i–n+ Nanowires by Dual-Top-Gate Voltage Modulation | Nano Letters Steep Subthreshold Swing n- and p-Channel Operation of Bendable Feedback Field-Effect Transistors with p+–i–n+ Nanowires by Dual-Top-Gate Voltage Modulation | Nano Letters](https://pubs.acs.org/cms/10.1021/acs.nanolett.5b00606/asset/images/medium/nl-2015-006065_0010.gif)